National Repository of Grey Literature 22 records found  1 - 10nextend  jump to record: Search took 0.01 seconds. 
Comparison of properties of thin layers of titanium, nickel and silver used in semiconductor technology
Dorotík, David ; Prášek, Jan (referee) ; Hejátková, Edita (advisor)
Bachelor theses were connected with knowledge of general problems of application of thin films by methods of sputtering and evaporation. Prepare the substrate and clean it before depositing thin layers. The work was focused on the properties of these thin films in semiconductor technology.
Evaluation of Different Dielectrics For Mid-Infrared Waveguides
Konečný, Aleš ; Arregi Uribeetxebarria, Jon Ander (referee) ; Detz, Hermann (advisor)
Využití plasmonovo polaritonových vlnovodů se ukázalo vhodné pro senzorové aplikace ve středně infračervené oblasti spektra. Vlnovod je v kontaktu s médiem v plynném či kapalném stavu, který obsahuje měřenou koncentraci hledané látky. Při šíření elektromagnetického vzruchu jsou na něj kladeny podmínky nízkých ztrát a dostatečné interakce s médiem. Tyto podmínky jsou splněny, je-li na kov nanesena tenká dielektrická vrstva. Tato práce je zaměřena na dielektrika na bázi křemíku. Součástí práce byla výroba vícevrstevnatých vlnovodů technikou plazmaticky vylepšené chemické depozice, magnetronového naprašování a metodou fotolitografie. Nanášení vrstev probíhalo na obvykle užívané Si substráty. Hodnocení dielektrických vrstev a výrobních metod probíhá na základě elipsometrických měření indexu lomu a absorbce v infračervené oblasti spektra.
Coating of tools by the PVD HiPIMS technology
Havlíková, Tereza ; Ohnišťová, Petra (referee) ; Píška, Miroslav (advisor)
This bachelor’s thesis is aimed on the study of PVD coatings of tools with a focus on HiPIMS (High Power Impulse Magnetron Sputtering) technology. As part of the research, the PVD coating methods are presented, then the basic physical processes and characteristics of magnetron sputtering are described and finally the HiPIMS technology is analysed. The aim of the experimental part of this study is to evaluate (Al,Ti)N coating deposited by HiPIMS technology on a wire drawing die. For coated and uncoated die, the wear of the die, surface quality and thermal impact on the wire are observed and compared.
Semiconductor devices production on silicon
Ježek, Vladimír ; Mikulík, Petr (referee) ; Špinka, Jiří (advisor)
This work deals with the basic technologies and processes of manufacturing semiconductor devices on a silicon substrate. Deals with the processes from creating a layer of silicon dioxide by oxidation, through the creation of structures using photolithography, the doping of additives into defined areas of diffusion, up to creating contacts and conductive pathways by sputtering. It also deals with the technological production process for silicon devices, description of devices and measurement, calculation layers of silicon dioxide, calculated of diffusion and measured characteristics of components and their evaluation.
Thin film systems
Rada, Vojtěch ; Sedlaříková, Marie (referee) ; Zatloukal, Miroslav (advisor)
This bachelor’s thesis is focused on the problematics of thin-film technology. In the beginning the work deals with a general theory of this problematics, discusses various methods and ways to lay a thin film, where more emphasis is placed on magnetron sputtering, which is used in the practical part of the work, and describes procedures that are performed before and after the application of the thin film. The magnetron sputtering coating machine NP-12 and its control are described in the practical part of the work. Subsequently the selection and adjustment of suitable substrates is made, the thin-film system is deposited using the magnetron sputtering method and the analysis of the properties of deposited thin-film samples is done.
Thin-film systems
Kuchařík, Jan ; Máca, Josef (referee) ; Zatloukal, Miroslav (advisor)
This bachelor thesis concerns to create of thin films on various types of substrates. In the theoretical parts is an overview of the formation of thin films using several techniques. The thesis contains an overview of substrate cleaning processes before the deposition of layer plates and tools for evaluating their properties. Finally, the masking method is discussed. In the experimental part, the acquaintance with the NP - 12 sputtering device and the production of samples took place. The adhesion of the produced samples was evaluated. Electrolysis of samples with titanium coated followed. Finally, the silicon substrate was masked.
Fabrication of well defined nanoporous structures with application in membrane sensing
Fabianová, Kateřina ; Édes, Zoltán (referee) ; Sadílek, Jakub (advisor)
Theme of this bachelor thesis is focused on preparation of the metal nanomenhir structures situated in highly oriented matrix of silicon nitride nanopores based plasmonic biosensor. Porous structures were prepared by reactive ion etching of silicon nitride film using electron beam lithography prepared temporary mask as a template. Deposition of metals was handled by evaporation and magnetron sputtering and results was compared. Finally, this work assumes reached results including successful approach of sensor preparation without contamination of surrounding surface by heavy metal ions.
Fabrication of plasmonic antennas for analytical transmission electron microscopy by focused ion beam lithography
Foltýn, Michael ; Kejík, Lukáš (referee) ; Horák, Michal (advisor)
This bachelor thesis is focused on sputtering of thin gold layers and manufacturing of plasmonic antennas using focused ion beam lithography. I optimised the process of sputtering of gold layers by ion beam assisted deposition. Furthermore, I optimised processes connected to manufacturing of plasmonic antennas by focused ion beam lithography. I sputtered thin gold layers 20, 30 and 40 nm thick by various deposition rates. In terms of grain size, the best layers were those deposited with rate of 2 /s. From view of crystallographic composition, the best results were achieved by using deposition rates of 0.2 and 3 /s. I made 3 types of antennas. Rod shaped antennas of 240 nm in length and widths of 40 and 80 nm, and bowtie antenna with 20 nm gap in between its wings. I further optimised parameters of ion etching for each thickness and deposition rate of sputtered layers used for creating antennas mentioned before. The highest quality of antennas was achieved when using layers 20 and 40 nm thick. For manufacturing of bowtie antennas however, layers of all thicknesses deposited by rate of 3 /s were optimal. I discovered, that for layers deposited with rate of 2 /s a lot of redeposited material got sputtered back on to antennas, which can bring the diameters of antennas closer to the desired value at least in one axis.
Power source supply for pulse magnetron sputtering
Chochola, Ondřej ; Havlíček, Tomáš (referee) ; Boušek, Jaroslav (advisor)
The delivered thesis deals with the theory of very thin layers deposition by means of pulse magnetron sputtering and the proposal, realization and testing of the power supply source for the pulse magnetron sputtering.
Vacuum technologies for creating thin-film systems
Kuchařík, Jan ; Šafl, Pavel (referee) ; Zatloukal, Miroslav (advisor)
The theoretical part of this theses deals with the formation of thin films by vacuum methods. It is a chemical and physical deposition from the gas phase in vacuum environment. Chemical deposition takes place at elevated temperatures, which accelerate reactions. Physical deposition is most often only condensation of vapors of evaporated material. Physical methods are vacuum evaporation, as well as cathodic, ionic, reactive and magnetron sputtering. The formation of thin layers takes place according to 3 known mechanisms. Substrates must be surface treated before the deposition process. The quality of thin films is examined from several perspectives. The practical part is devoted to the production of a thin-film system of copper and tin on a glass substrate. These layers are separated by three different barrier metals. Subsequently, the prepared samples were exposed to thermal stress and were monitored by electron microscope. Diffusion processes at the thin film interface were compared.

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